Features & Thin Film Process Capability
Features
- High frequency, high performance, low temperature drift
- Ceramic substrate with coplanar waveguide 50Ω output
- Surface-mount design, suitable for multi-chip integrated modules
Thin Film Process Capability
Precision Conductors:
- Width-to-thickness ratio ≥ 3; Minimum line width/spacing: 5μm; Tolerance: ±1μm
Via Metallization:
- Diameter: D ≥ 0.1mm; Aspect Ratio (D/H) ≥ 0.3
- Annular Ring Width: C ≥ 0.05mm
- Via Resistance: R ≤ 10mΩ
Precision Resistors:
- Precise control of line geometry and thickness
- Sheet Resistance Range: 5Ω/□ ~ 200Ω/□
- Temperature Coefficient of Resistance (TCR): 20 ± 60 ppm (-50~150°C)
- Resistance Tolerance: ±2%; Laser Trimmed: ±0.1%
- Resistor Line Width/Spacing: ≥ 5 μm
Typical Waveform Characteristics