• Features symmetric leadless pads on all four sides, capable of transmitting control signals or RF signals from DC to 40GHz.
• Die attach grounding methods include metallized grounding or metal heat sink grounding to meet diverse thermal management requirements of different chips.
• Package sealing options encompass parallel seam welding, alloy soldering, adhesive bonding, and various other lid attachment methods.
• Compact size, lightweight, excellent high-frequency performance, ideal for packaging low-power chips.

Features

• Based on high-performance ceramic materials: Al₂O₃, AlN, Si₃N₄, ZTA, high-Q dielectric ceramics, etc.
• High-reliability magnetron sputtering and electroplating processes
• Optional fired ceramic laser shaping process: high efficiency and low cost
• Optional green tape forming process: high-quality via holes and edge quality
• Substrate thickness range: 0.3-3mm
• Plating layers: Cu, Ag, Sn, Ni, Au; maximum plating thickness: 100um

Applications

• Heat sinks for high-power lasers, LED submounts, high thermal conductivity heat sink substrates
• Wireless communications, RF microstrip circuits

Features

• Based on high thermal conductivity ceramic materials: Si₃N₄, AlN, Al₂O₃, etc.
• High-reliability AMB (Active Metal Brazing) brazing paste system
• Substrate thickness range: 0.3-3mm
• Copper foil thickness: 100-800um
• Supports surface finishes: Cu, Ag, Sn, Ni, Au

Applications

• Heat sink substrates for high-power IGBTs