Features & Applications
HTCC Material
HTCC Layout Guidelines
DPC & AMB
Parameters
Features & Applications
Features
- Ceramic Leadless Chip Carrier (LCCC) packages are available in two structural configurations: cavity-up and cavity-down.
- Common terminal pitches include 1.27mm; narrower pitches such as 1.0mm, 0.8mm, and 0.635mm can be customized per customer requirements, with heat sink designs tailored to specific needs.
- Package sealing options encompass parallel seam welding, alloy soldering, adhesive bonding, and various other lid attachment methods.
- Compact size, lightweight, excellent thermal dissipation, suitable for packaging various VLSI (Very Large Scale Integration), ASIC (Application-Specific Integrated Circuit), and other integrated circuits.
Applications
- Applications include SIP (System-in-Package), optical communication modules, MEMS chips, FPGA packaging, CMOS image sensor packaging, automotive electronics, aerospace and other high-reliability chip packaging solutions, as well as millimeter-wave HTCC (High-Temperature Co-fired Ceramic) substrates.
DPC & AMB
DPC Ceramic Substrate
Features
- Based on high-performance ceramic materials: Al2O3, AlN, Si3N4, ZTA, high-Q dielectric ceramics, etc.
- High-reliability magnetron sputtering and electroplating processes
- Optional fired ceramic laser shaping process: high efficiency and low cost
- Optional green tape forming process: high-quality via holes and edge quality
- Substrate thickness range: 0.3-3mm
- Plating layers: Cu, Ag, Sn, Ni, Au; maximum plating thickness: 100um
Applications
- Heat sinks for high-power lasers, LED submounts, high thermal conductivity heat sink substrates
- Wireless communications, RF microstrip circuits
AMB Ceramic Substrate
Features
- Based on high thermal conductivity ceramic materials: Si3N4, AlN, Al2O3, etc.
- High-reliability AMB (Active Metal Brazing) brazing paste system
- Substrate thickness range: 0.3-3mm
- Copper foil thickness: 100-800um
- Supports surface finishes: Cu, Ag, Sn, Ni, Au
Applications
- Heat sink substrates for high-power IGBTs
Typical Waveform Characteristics