• Ceramic Package for Microwave Solid-State Power Devices: The structure is composed of high-thermal-conductivity materials welded with alumina ceramic walls and wide input/output leads.
• This type of package offers excellent thermal dissipation and microwave performance, suitable for encapsulating silicon high-frequency high-power devices, LDMOS devices, GaAs, and GaN power devices; maximum power handling can reach up to 3000W.
• Leaded Planar Transmission Package: Designed for RF/microwave power transistor housings, utilizing low-loss ceramic transmission terminals and low-thermal-resistance heat dissipation materials, ideal for packaging high-power RF/microwave devices; operating frequency can reach up to 40GHz.
• Features high hermetic reliability, excellent electromagnetic shielding, superior isolation performance, and outstanding thermal conductivity.

Features

• Based on high-performance ceramic materials: Al₂O₃, AlN, Si₃N₄, ZTA, high-Q dielectric ceramics, etc.
• High-reliability magnetron sputtering and electroplating processes
• Optional fired ceramic laser shaping process: high efficiency and low cost
• Optional green tape forming process: high-quality via holes and edge quality
• Substrate thickness range: 0.3-3mm
• Plating layers: Cu, Ag, Sn, Ni, Au; maximum plating thickness: 100um

Applications

• Heat sinks for high-power lasers, LED submounts, high thermal conductivity heat sink substrates
• Wireless communications, RF microstrip circuits

Features

• Based on high thermal conductivity ceramic materials: Si₃N₄, AlN, Al₂O₃, etc.
• High-reliability AMB (Active Metal Brazing) brazing paste system
• Substrate thickness range: 0.3-3mm
• Copper foil thickness: 100-800um
• Supports surface finishes: Cu, Ag, Sn, Ni, Au

Applications

• Heat sink substrates for high-power IGBTs